D2018UK document number 3039 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. p d power dissipation bv dss drain ? source breakdown voltage bv gss gate ? source breakdown voltage i d(sat) drain current t stg storage temperature t j maximum operating junction temperature 42w 65v 20v 4a ?65 to 150c 200c mechanical data gold metallised multi-purpose silicon dmos rf fet 10w ? 28v ? 1ghz single ended features simplified amplifier design suitable for broad band applications low c rss simple bias circuits low noise high gain ? 10 db minimum absolute maximum ratings (t case = 25c unless otherwise stated) applications vhf/uhf communications from 50 mhz to 1 ghz metal gate rf silicon fet tetrafet
dp pin 1 source pin 2 drain pin 3 gate dim mm tol. inches tol. a 16.51 0.25 0.650 0.010 b 6.35 0.13 0.250 0.005 c 45 5 45 5 d 1.52 0.13 0.060 0.005 e 6.35 0.13 0.250 0.005 f 0.13 0.03 0.005 0.001 g 3.56 0.51 0.140 0.020 h 0.64 0.13 0.024 0.005 rohs compliant
D2018UK document number 3039 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. parameter test conditions min. typ. max. unit v gs = 0 i d = 10ma v ds = 28v v gs = 0 v gs = 20v v ds = 0 i d = 10ma v ds = v gs v ds = 10v i d = 0.8a p o = 10w v ds = 28v i dq = 0.4a f = 1ghz v ds = 0 v gs = ?5v f = 1mhz v ds = 28v v gs = 0 f = 1mhz v ds = 28v v gs = 0 f = 1mhz v ma a v s db % ? pf pf pf electrical characteristics (t case = 25c unless otherwise stated) drain?source bv dss breakdown voltage zero gate voltage i dss drain current i gss gate leakage current v gs(th) gate threshold voltage* g fs forward transconductance* g ps common source power gain drain efficiency vswr load mismatch tolerance c iss input capacitance c oss output capacitance c rss reverse transfer capacitance 65 0.8 1 17 0.72 10 40 20:1 48 24 2 hazardous material warning the ceramic portion of the device between leads and metal flange is beryllium oxide. beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. these devices must never be thrown away with general industrial or domestic waste. r thj?case thermal resistance junction ? case max. 4.2c / w thermal data * pulse test: pulse duration = 300 s , duty cycle 2%
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